Demonstration of Artificial Afferent Nerve Properties With Forming-Free and SiO2-Based Memristive Synapses

Abstract

The development of artificial nerve systems is considered of great significance for the fabrication of artificial appendages or intelligent robotics with environmental communication and awareness. Along these lines, in this work, the synaptic properties of a SiO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> -based conductive bridge random access memory (CBRAM) were thoroughly investigated. Initially, a detailed study was conducted to understand and catalog the short-and long-term properties of the device, and their underlying physical mechanisms. To that end, a numerical model was introduced for interpreting the synaptic pattern within the device and its results were validated with the acquired experimental data. In addition, an artificial afferent nerve concept was demonstrated, comprising a piezoelectric sensory receptor, to generate electrical signals in response to either impulsive (“touch and go”) or continuous external stimuli (“touch and stay”), a microcontroller-emulated leaky-integrate-and-fire neural node converting the signals into spiking action potentials, and the CBRAM element as a terminal synapse, responsible for processing/attenuating the action potentials Throughout these procedures, the synaptic adaptation and the memory consolidation processes were recorded and analyzed.