Abstract
We have demonstrated laser operation of an AlGaN multiple-quantum-well (MQW) laser diode (LD) with a peak wavelength of 336.0 nm under pulsed current mode at room temperature. The LD was fabricated on a low-dislocation-density Al0.3Ga0.7N grown on a sapphire substrate using a hetero-facet-controlled epitaxial lateral overgrowth method. The laser emission is strongly transverse electric polarized with a peak output power of 3 mW and a differential external quantum efficiency of 1.1%. This demonstration of the LD lasing in ultraviolet-AII spectral band (320–340 nm) suggests that the AlGaN MQW LDs can be potent devices opening a path to deeper ultraviolet LDs.
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