Abstract
A technique for fabricating many different wavelength lasers on the same wafer has been developed. High energy ion implantation was used to selectively blue shift the emission wavelength of an InP-based quantum well laser structure. This structure was then processed into fully functional broad-area lasers whose current threshold was unaffected by the implantation process, indicating extremely high material quality after bandgap-shifting. This process has the potential for the integration of not only different wavelength lasers, but also other devices, such as waveguides, detectors, modulators, etc., on a single wafer.
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