Abstract
An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has a cut off wavelength of 3.95 μm, compared to 3.41 μm in a reference InAs diode, indicating that Bismuth has been successfully incorporated to reduce the band gap of InAs by 75 meV. Similar band gap reduction was deduced from the cut off wavelength comparison at 77 K. From the dark current data, R0A values of 590 MΩcm2 and 70 MΩcm2 at temperatures of 77 and 290 K respectively, were obtained in our InAsBi photodiode.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
