Abstract

We demonstrate a Ti:sapphire laser pumped directly with a green diode laser. A single 1 W InGaN diode laser operating at 518 nm is used as the pump source. Pulse durations as short as 62 fs and average output powers of up to 23.5 mW are obtained with chirped-mirror-based dispersion compensation and a semiconductor saturable absorber mirror (SESAM).

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.