Abstract
We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.
Highlights
The need for low cost photonic devices has stimulated a significant amount of research in silicon photonics [1,2]
Obtaining net Raman gain in silicon is challenging due to the losses induced by free carriers that are generated by the Two Photon Absorption (TPA) process in silicon [7,8]
To the extent that the pulse width is much less than the carrier lifetime and the pulse period is much larger than the lifetime, free carrier generation becomes negligible making it possible to obtain net gain [11,12,13,14]
Summary
The need for low cost photonic devices has stimulated a significant amount of research in silicon photonics [1,2]. “Observation of Raman emission in silicon waveguides at 1.54 μm,” Opt. Express, 10, 1305-1313 (2002), http://www.opticsexpress.org/abstract.cfm?URI=OPEX-10-22-1305 “Observation of stimulated Raman amplification in silicon waveguides,” Opt. Express, 11, 1731-1739 (2003) http://www.opticsexpress.org/abstract.cfm?URI=OPEX-11-15-1731 “Anti-Stokes Raman conversion in Silicon waveguides,” Opt. Express, 11, 2862-2872 (2003) http://www.opticsexpress.org/abstract.cfm?URI=OPEX-11-22-2862
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