Demonstration of 4H-SiC visible-blind EUV and UV detector with large detection area

Abstract

4H-SiC visible-blind photodetectors specially designed for extreme ultraviolet (EUV) as well as ultraviolet (UV) detection are fabricated and characterised. Spectral quantum efficiency (QE) from 21.5 to 400 nm is determined. The devices have a 2×2 mm active area and less than 1 pA leakage current at low bias. The peak QE is 40–45% around 270 nm. Between 120–200 nm, the detector QE is about 4–20%. EUV light generates multiple electron hole pairs in the range of 21.5 to 77.5 nm, resulting in an apparent QE above 140% at 21.5 nm.