Abstract
The design, fabrication and characterisation of a high performance 4H-SiC diode of 1789 V–6.6 A with a low differential specific-on resistance (RSP_ON) of 6.68 mΩ · cm2, based on a 10.3 µm 4H-SiC blocking layer doped to 6.6×1015 cm−3, is reported. The corresponding figure-of-merit of VB2/RSP_ON for this diode is 479 MW/cm2, which substantially surpasses previous records for all other MPS diodes.
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