Abstract
We reported on the InGaN p-i-n homojunction solar cells with In contents of 0.02 and 0.12. Under the same illumination of Xe lamp, In0.02 Ga0.98N cell exhibited a fill factor (FF) of 67.8%, a higher open-circuit voltage (Voc) of 2.15 V while In0.12Ga0.88N cell showed a FF of 64.8% and a lower Voc of 1.35 V. The measurements of atomic force microscopy (AFM) images and leakage currents revealed that V-shaped defects, which are known to cause the increase in reverse current, were the main factor dominating the Voc of In0.12Ga0.88N cells. Short-circuit current versus open-circuit voltage (Jsc - Voc) curves were consistent with the characteristics expected from the current-voltage equation. Relative external quantum efficiencies (EQEs) were also measured and showed strong dependence on V-shaped defects. These results indicate that defects in bulk InGaN has a negative impact on the photovoltaic performances of solar cells based on III-nitrides.
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