Abstract
Wafer-level Cu oxide hybrid bonding owns a number of merits, including simultaneous formations of electrical and mechanical bonds, underfill free, high alignment accuracy, increasing bond strength, and excellent reliability performance in 3-D integration. This letter demonstrates the fabrication of wafer-level Cu oxide hybrid bonding. Investigations of experimental and electrical simulation data of Cu oxide hybrid bonding structures are reported. Their alignment accuracy, frequency responses, and passive elements are compared for 3-D integration applications.
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