Abstract
To increase the CD uniformity and throughput of SLM-based maskless lithography, the delta lithography method (DLM) has been developed. The basic idea of the DLM is to create a delta configuration by using a rectangular point array. The DLM enables irradiation in a honeycomb structure with equilateral triangles or a square structure with right-angled isosceles triangles. To verify the DLM, lithography simulations and a lithography experiment to fabricate a photomask were performed. The pattern appeared to be well defined with extremely low LER. The potential of the DLM to increase the CD uniformity and throughput is confirmed.
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