Delineation of a p-n junction using dC/dX imagery produced by shear-mode scanning capacitance microscopy

Abstract

Using a laterally oscillating all-metallic probe, a scanning capacitance microscope (SCM) has been used to yield an image of the spatial derivative of the local capacitance, dC/dX, where C and X are the local capacitance and the axis of the probe tip locus on the sample surface, respectively. Bias fields, except for the ultra-high-frequency fields used for sensing the capacitance, are not necessary to detect the dC/dX signal, which yields an image delineating clearly the depletion region due to the p–n junction. Simultaneously with the dC/dX image, the new SCM can give images of topography and dC/dV if an alternating field V is applied between the probe and sample.