Abstract
Abstract We have investigated a single crystal of the wide bandgap II–VI semiconductor ZnSe. The sample was highly resistive due to heavy compensation of this n-type semiconductor. In low transverse fields, clear signs of conversion from a paramagnetic to a diamagnetic fraction are observed, at about 60 K. The data are interpreted as delayed electron capture by paramagnetic muonium, forming the negatively charged state Mu - . The implications with respect to the electrical activity of muonium, and by analogy hydrogen, in this semiconductor are analyzed.
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