Abstract
InAlAs-InGaAs HEMTs with 0.4- to 5- mu m gate lengths have been fabricated and a maximum f/sub T/ of 84 GHz has been obtained by a device with a 0.4- mu m gate length. A simple analysis of their delay times was performed. It was found that gradual channel approximation with a field-dependent mobility model with E/sub c/ of 5 kV/cm holds for long-channel devices (L/sub g/>2 mu m), while a saturated velocity model with a saturated velocity of 2.7*10/sup 7/ cm/s holds for short-channel devices (L/sub g/<1 mu m).< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
