Abstract
The resistive-capacitive behavior of long interconnects which are driven by CMOS gates is analyzed in this paper. The analysis is based on the /spl pi/-model of an RC load and is developed for submicron devices. Accurate and analytical expressions for the output voltage waveform, the propagation delay and the short circuit power dissipation are derived by solving the system of differential equations which describe the behavior of the circuit. The effect of the coupling capacitance between input and output and that of short circuit current are also incorporated in the proposed model. The calculated propagation delay and short circuit power dissipation are in very good agreement with SPICE simulations.
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