Abstract
In this work, we investigated triple-junction (3J) solar cell with inverted metamorphic structure, used for space application. Unlike conventional inverted metamorphic (IMM) InGaP/GaAs/In0.30Ga0.70As, we propose inclusion of MQW in the middle GaAs for better spectral response and radiation resistance. Using Crosslight APSYS, the important non-idealities such as surface recombination velocity (SRV) and threading dislocation density (TDD) are defined and its effect on device characteristics are presented. For TDD upto 1 × 105 cm−2 in the graded buffer InGaP and the bottom In0.30Ga0.70As subcell, the influence on device characteristics has obtained to be very marginal. Under 1-sun AM0 spectrum, the proposed triple junction InGaP/InGaAs-GaAsP MQW/InGaAs inverted metamorphic solar cell (3J MQW IMM) attained a maximum efficiency of 37.15% (without SRV) and 36.39% (at 104 cm/s SRV).
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