Abstract
This work investigates the effects of oxygen and humidity on black phosphorous (BP) and black arsenic phosphorous (AsxP1−x ) flakes using Raman spectroscopy and in situ electric transport measurements (four-probe resistance and thermoelectric power, TEP). The results show that the incorporation of arsenic into the lattice of BP renders it more stable, with the degradation times for BP, As0.2P0.8, and As0.4P0.6 being 4, 5, and 11 days, respectively. The P-P Raman peak intensities were determined to decrease with exposure to oxygen and moisture. The TEP measurements confirmed that both BP and AsxP1−x are p-type semiconductors with the TEP of As0.4P0.6 stabilizing more slowly than that of BP. In addition, the four-probe resistance of BP and AsxP1−x stabilized significantly faster when exposed to air after being degassed in a vacuum. This was attributed to the charge transfer between the oxygen redox potential of air and the Fermi energy (EF) of the semiconductors.
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