Abstract
The defects resulting in degradation of AlGaAs GaAs visible lasers have been studied in this paper by deep level transient spectroscopy (DLTS) and ultrasonic Abrahams-Buiocchi (AB) etching (USABE) or ultrasonic Doniach-Šunjić (DS) etching (USDSE). The dislocations and deep levels in AlGaAs GaAs degrade the visible lasers seriously. The donor-related deep centers (DX centers), are non-irradiating traps and attached to the dislocations in n-type AlGaAs. While a laser is in light-emitting operation, most of the injected carriers focus on the dislocations in company with DX centers, which results in the degradation of the AlGaAs GaAs lasers. The effects of defects in AlGaAs GaAs on relative lasers can be avoided by growing an InGaAs buffer layer between the AlGaAs cladding layer and GaAs substrate.
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