Abstract
We study the degradation of CMOS inverters under DC and pulsed stress conditions before the occurrence of the gate oxide breakdown. Our results show an overall speed reduction, caused by the transistor drain current drop, and a leftward shift of the inverter voltage transfer characteristics, due to a larger degradation of the PMOSFET as compared to the NMOSFET. We attribute this behavior to the build-up of defects/trapped charge featuring a different kinetics in P- and N-type MOSFETs.
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