Abstract

Silicon photonic biosensors are being widely researched as they combine high performance with the potential for low-cost mass-manufacturing. Sensing is typically performed in an aqueous environment and it is assumed that the sensor is chemically stable, as silicon is known to etch in strong alkaline solutions but not in liquids with a pH close to 7. Here, we show that silicon can be affected surprisingly strongly by typical cell culture media, and we observe etch rates of up to 2 nm/hour. We then demonstrate that a very thin (< 10 nm) layer of thermal oxide is sufficient to suppress the etching process and provide the long-term stability required for monitoring cells and related biological processes over extended periods of time. We also show that employing an additional pH buffering compound in the culture medium can significantly reduce the etch rate.

Highlights

  • Silicon photonics has become a firmly established technology, both in the fields of data communications and in biomedical sensing

  • We demonstrate the drastic effect of the cell culture medium (CCM) on silicon: following a typical cell culture period of 4 days, up to 85% of the 220 nm thick device layer on silcon-on-insulator (SOI) is etched away

  • It is well known that crystalline silicon is chemically etched by alkaline solutions, and this is often used in silicon processing to etch away silicon

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Summary

Introduction

Silicon photonics has become a firmly established technology, both in the fields of data communications and in biomedical sensing. The sensing application relies on resonant nanostructures such as microrings and photonic crystals. Despite the extensive use of silicon in optical biosensors, to our knowledge, there is no study on its stability in standard cell culture medium (CCM). We demonstrate the drastic effect of the CCM on silicon: following a typical cell culture period of 4 days, up to 85% of the 220 nm thick device layer on silcon-on-insulator (SOI) is etched away Silicon oxide has previously been reported as a passivation layer for silicon devices in aqueous environments [9, 10].

Materials and methods
Measurement of the thermal oxide thickness
Analysis of SOI etching by cell media
Prevention of SOI etching with a thin thermal oxide layer
Estimation of the thermal oxide film thickness
Reducing the etching rate of SOI using buffered CCM
Discussion and conclusions
Full Text
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