Abstract
The combined impact of single event effect (SEE) and total ion dose (TID) on Si-based radiation-hardened Vertical Double-diffused Metal-Oxide-Semiconductor (VDMOS) Field-Effect Transistor (VDMO-SFET) is investigated in this letter. As previous research of VDMOS on TID effect and SEE carried out separately, in fact, the combined impact could degrade the device performance more seriously, because of the greater numbers of oxide-trapped charges and interface states generated, which is more pronounced during multiple gamma irradiation and post-irradiation annealing. This phenomenon indicates that SEE is not only a transient effect, influencing whether the devices can be driven to failure, but also a potential threat to the long-term reliability of MOSFETs used in aerospace applications.
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