Abstract
A spatial distribution of Pb centers in a disk of porous silicon measured using a microwave scanning electron spin resonance (ESR) microscope was compared with the image of photoluminescence (PL) observed using a charge-coupled device (CCD) camera. The intensity of PL had a negative correlation with ESR intensity of Pb centers having g⊥=2.0092 and g∥=2.0021 in the high-density area, while it was positively correlated with the low-density area. The generation process of Pb centers may accompany the production of radiative PL-related centers. The PL efficiency is decreased due to Pb centers acting as recombination centers leading to PL quenching. Oxygen ion implantation also decreased the PL intensity and produced dangling bonds having g=2.0056 and defects tentatively assigned as oxygen hole centers having g1=2.0036, g2=2.0064 and g3=2.061 in porous silicon.
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