Abstract
Degradation process of perovskite photovoltaic cells with Spiro-OMeTAD hole transport layer (HTL) has been monitored by means of capacitance spectroscopy. Detailed measurements of the capacitance as a function of the bias voltage revealed that the efficiency decline is accompanied by the doping level decrease of HTL at the perovskite interface. Together with the TOF-SIMS measurement, it is clearly demonstrated that one degradation mechanism is due to the diffusion of dopant in the HTL into the adjacent perovskite layer.
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