Abstract
Irradiation damage in p - i - n photodiodes by 1 MeV fast neutrons is studied as a function of fluence for the first time. The degradation of the electrical and optical performance of diodes increases with increasing fluence. The influence of the radiation source on device degradation is then discussed by comparison with 1 MeV electrons with respect to the numbers of knock-on atoms and the non-ionizing energy loss (NIEL). The dependence of performance degradation on the radiation source is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.
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