Degradation of forward current density with increasing blocking voltage in diamond Schottky-pn diodes

Abstract

Schottky-pn diodes (SPNDs) have been proposed as a novel solution allowing high current density in the lightly-doped drift regions of diamond and other semiconductors where shallow doping is difficult. Here we show, using simulations, that while SPNDs may have applications in low voltage diamond devices, development of high voltage devices is precluded by space-charge limited conduction physics inherent to the SPND structure at high current densities. For designed blocking voltages above 1000 V, simulations indicate that SPNDs are dramatically outperformed by properly designed conventional Schottky diodes.