Abstract
The ferroelectric properties of integrated Pt/SrBi2Ta2O9 (SBT)/Pt capacitors with boron (B)- and phosphorus (P)-doped silicate glass (BPSG) as an interlevel dielectric layer were investigated. After annealing at 800 °C to densify the BPSG, a significant reduction in remanent polarization was observed. Both transmission electron microscopy and nanoprobe energy dispersive spectroscopy analysis showed bismuth (Bi) and P interdiffusion across the interface between the SBT and BPSG layers. This strongly suggests that Pt/SBT/Pt capacitor degradation results from Bi loss in the surface region of the SBT layer, which is induced by P diffusion into the SBT. The degradation in ferroelectric properties was prevented by inserting a thin undoped silicate glass (USG) layer between the SBT and the BPSG, which blocked P diffusion. From the USG thickness dependence of the remanent polarization, P-induced degradation was also verified.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
