Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

Abstract

The degradation of the electrical performance of ultra thin gate oxide fully depleted (FD)-SOI n-MOSFETs subjected to 7.5-MeV proton irradiation is reported. The degradation is investigated by studying the static characteristics of transistors with different geometries and back-gate bias conditions. Special attention is paid to the analysis of the floating body effect induced by the application of an accumulation bias to the back-gate. It is shown that the degradation is more pronounced for short channel transistors. The subthreshold swing for the front and back channel are examined for devices with different L and V BG . The hysteresis characteristics of the drain and gate current, and the drain current transients are examined as well.