Abstract
Future optical lithography systems will use deep ultraviolet (DUV) excimer lasers as radiation source to enhance the resolution below 0.3 μm. Compared to conventional high pressure mercury lamps DUV excimer lasers, working at a wavelength of 193 nm, are able to supply high radiation intensities at a high photon energy. We investigated the degradation of Cr- and MoSi 2 photomasks due to DUV irradiation. The degree of damage was examined as a function of pulse energy density, dose and pulse frequency. It can be stated that at intensitities necessary for DUV optical stepper systems no degradation of the photomasks will occur.
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