Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films

Abstract

Electron backscatter diffraction revealed that during the hot-wire deposition of silicon nitride, a tantalum filament partially transformed to some of its nitrides and silicides. The deposition of an encapsulating silicon nitride layer occurred at the cooler filament ends. Time-of-flight secondary ion mass spectroscopy disclosed the presence of hydrogen, nitrogen and silicon containing ions within the aged filament bulk. Hardness measurements revealed that the recrystallized tantalum core experienced significant hardening, whereas the silicides and nitrides were harder but more brittle. Crack growth, porosity and the different thermal expansion amongst the various phases are all enhanced at the hotter centre regions, which resulted in failure at these areas.