Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons

Abstract

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV protons, the short-circuit currents ( I SC) and open-circuit voltages ( V OC) are simulated. The damage coefficients of minority carrier diffusion length ( K L ) and the carrier removal rate of base carrier concentration ( R C) of each sub-cell are also estimated. The values of I SC and V OC obtained from the calculations show good agreement with experimental values at an accuracy of 5%. These results confirm that the degradation modeling method developed in this study is effective for the lifetime prediction of 3J solar cells.