Abstract
The electrical characteristics and interdiffusion in electron-beam evaporated Mo/GaAs0.6P0.4 Schottky barriers have been studied. The barrier height, ideality factor and deep trapping levels of these annealed or unannealed Mo/GaAs0.6P0.4 Schottky barriers are obtained by using the I–V, C–V, Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and deep level transient spectroscopy (DLTS) analyses. A significant interdiffusion at the Mo/GaAs0.6P0.4 interface is demonstrated for 500 °C, 600 °C, annealed Schottky barriers. DLTS results show that there are two electron traps [Ec −(0.19±0.01) eV and Ec -(0.65±0.01) eV] and five hole traps [Ev +0.15 eV, Ev +(0.27±0.01) eV, Ev +(0.36±0.02) eV, Ev +(0.56±0.01) eV and Ev +0.84 eV] in existence at the metal-semiconductor interface or in the bulk of the degraded Schottky barriers. These traps enhance the generation-recombination effect and degrade the barrier height. RBS, AES, and DLTS results also indicate that the newly discovered hole trap Ev +0.84 eV, induced by Mo indiffusion, is believed to play a major role for Mo/GaAs0.6P0.4 Schottky barriers degradation.
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