Abstract
The degradation mechanism of fluorine treated enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) under high reverse gate bias was studied in this paper. The experimental results show that E-mode HEMTs using fluorine ion implantation shows a significant negative shift of threshold voltage (Vth) during the long-term high reverse gate bias. Three main degradation mechanisms are used to explain this phenomenon. In this paper, F ions impact ionization is found to be the main reason for the device degradation under high reverse gate bias. Moreover, it is also observed that the degradation of V th can be partially recovered after temperature annealing.
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