Abstract
Base current degradation mechanisms in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors (HBTs) under forward current stress is investigated in transistors with a thin AlGaAs surface protection ledge. Although the base current in HBTs with ledge is relatively stable compared to that in HBTs without ledge, the base current increase in some of these passivated HBTs is still noticeable. An increase of surface recombination current in the region surrounding the AlGaAs ledge is identified as a primary degradation mechanism. To alleviate the base current instability, several passivated emitter-base junction fabrication processes are recommended.
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