Abstract
We have evaluated the characteristic degradation of amorphous-InGaZnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> thin-film transistors (α-IGZO TFTs) to apply to active-matrix organic light-emitting diode displays (AM-OLEDs) using current-voltage (I-V) and capacitance-voltage (C-V) curves and an extraction technique of trap densities. First, the degradation was a parallel shift of the I-V and <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> - <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> curves after a short time, mainly caused by fixed charge injection into the gate insulator when gate voltage stress was applied by supposing switching TFTs in AM-OLEDs. Second, the degradation was a parallel shift of the I -V curve and slope dullness of the C-V curve after a long time, mainly caused by trap generation in the channel layer when drain current stress was applied by supposing driving TFTs in AM-OLEDs. We should note that two different degradation modes occur when α-IGZO TFTs are applied to AM-OLEDs.
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