Abstract
The influence is considered of a strong electrical field on the electrical characteristics of anodic tantalum oxide in MOS- and MOM-structures. It is shown that the action of strong electrical fields results in irreversible changes in the conductivity of a dielectric due to spectrum transformations of localized states in the Ta2O5 forbidden band. A correlation is noted between the field dependences of the breakdown delay time and the rate of development of the degradation processes.
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