Abstract
In this study, the performance degradation and annealing behavior of NPN SiGe HBT exposed to swift heavy ion irradiation were investigated. The direct current (DC) characteristics such as forward Gummel, junction leakage current and Early voltage were studied to quantify the irradiation tolerance. Base current and junction leakage current was found to increase after irradiation. The recovery of electrical parameters was characterized after room-temperature isothermal annealing and elevated-temperature isochronal annealing. An obvious temperature-dependence effect was found in the subsequent annealing process. Significant recovery existed in the high-temperature isochronal annealing process, while less was found in the room temperature self-annealing process. The different annealing behaviors of ionization damages and displacement damages are demonstrated to be responsible for various recoveries under room temperature and elevated temperature. The underlying physics mechanisms are discussed in detail.
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