Abstract
The experiments of the 0.18-μm pinned photodiode (PPD) CMOS image sensors (CISs) irradiated by energetic proton radiation with energies of 20, 40, 60, and 100 MeV are presented. The degradations of the mean dark signal, dark signal non-uniformity (DSNU), and fixed pattern noise (FPN) induced by protons are presented. The experimental results show that the mean dark signal degradations of the CISs decrease with increasing proton energy at the same fluence. The degradations induced by proton radiation at different fluence are also presented. The mean dark signals increase with increasing integration time at the same proton fluence. The degradation mechanisms of the CISs induced by energetic protons are analyzed.
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