Abstract

In this paper we reported the electrical and spectral properties of 1 MeV electron and 3 MeV proton irradiated In0.53Ga0.47As single junction solar cell, which is used as the fourth subcell of wafer bonded GaInP/GaAs//InGaAsP/InGaAs four-junction full spectra solar cell. The equivalent displacement damage dose model was applied to study the radiation effects of solar cell. The results show that the electrical parameters of the solar cell degrade seriously with the increase of irradiation fluences, the reduction of minority carrier life-time and changes of series and shunt resistance caused by irradiation-induced displacement damage are the main reason for the degradation of cell performance. Degradation of spectral response mainly occurred in the long wavelength region of solar cell due to the bigger displacement damage in the base layer of solar cell. Degradation properties of solar cell by electron and proton irradiation can be predicted by electron to proton damage equivalency factor Rep.

Highlights

  • The band gap of III-V compound semiconductor materials ranges from 0.7 eV to 3.4 eV and covers almost the whole solar spectrum.1 High-efficiency (η ∼30% at AM0) lattice-matched (LM) GaInP/GaAs/Ge solar cell is the main cell type for space application over past decades due to its superior performance in both conversion efficiency and radiation resistance

  • In this paper we reported the electrical and spectral properties of 1 MeV electron and 3 MeV proton irradiated In0.53Ga0.47As single junction solar cell, which is used as the fourth subcell of wafer bonded GaInP/GaAs//InGaAsP/InGaAs four-junction full spectra solar cell

  • The research work reported in this paper is a part of our ongoing project, we studied MBE grown In0.53Ga0.47As single junction solar cell, which is used as the fourth subcell of the wafer bonded four-junction full spectra solar cell described in Ref. 13

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Summary

INTRODUCTION

The band gap of III-V compound semiconductor materials ranges from 0.7 eV to 3.4 eV and covers almost the whole solar spectrum. High-efficiency (η ∼30% at AM0) lattice-matched (LM) GaInP/GaAs/Ge solar cell is the main cell type for space application over past decades due to its superior performance in both conversion efficiency and radiation resistance. The result of our previous research, 1 MeV electron irradiation on wafer bounded four-junction GaInP/GaAs//InGaAsP/InGaAs solar cell with band gap energies of 1.90/1.42/1.05/0.74 eV, shows that the degradation of InGaAs and InGaAsP subcells caused the deterioration of total performance.. The result of our previous research, 1 MeV electron irradiation on wafer bounded four-junction GaInP/GaAs//InGaAsP/InGaAs solar cell with band gap energies of 1.90/1.42/1.05/0.74 eV, shows that the degradation of InGaAs and InGaAsP subcells caused the deterioration of total performance.13 Based on this result, we performed 1 MeV electron irradiation on InGaAsP/InGaAs doublejunction and InGaAsP, InGaAs subcells of above four-junction solar cells.. The degradation properties of 1 MeV electron and 3 MeV proton irradiated In0.53Ga0.47As single junction solar cell main parameters have been discussed and degradation mechanism were analysed by equivalent displacement damage dose method

EXPERIMENTAL
Electrical parameters
MeV electron 3 MeV proton
Spectral properties
CONCLUSION
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