Abstract
We present a theoretical calculation and experimental data on the effective third-order susceptibilities χ(3) for degenerate four-wave mixing near the band gap of semiconductors. The closeness of the calculated and experimental values for the effective χ(3) in silicon at 1.06 μm indicates the utility of our simple calculation. The large values of χ(3) indicate the possibility of high-efficiency degenerate four-wave mixing in semiconductors, especially at longer wavelengths.
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