Abstract
We have studied scattering mechanisms in high electron mobility GaAs/Ga0.7Al0.3 As heterostructures. We have performed measurements of two-dimensional electron gas concentration and mobility as functions of temperature and hydrostatic pressure. We focused our attention on two-dimensional scattering by acoustic phonons and we found that the magnitude of the deformation potential D for GaAs in the considered heterostructures is -12±1.0 eV. Contrary to the common assumptions about the pressure independence of D we have found that its absolute value decreases with applied hydrostatic pressure by about 10%/GPa.
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