Deformation potential constants of deep impurity centers in semiconductors with anisotropic valence band

Abstract

The effect of strain on the ground state of an impurity center with a deep Γ8 level was considered. The model of short-range potential of the impurity center was applied to the analysis of level splitting. The impurity center deformation potential constants were obtained as functions of the band constants and deep level energies in the cases of spherical and nonspherical approximation for the valence band structure. For a deep center in GaAs and Ge, numerical calculations of the deformation potential constants were performed.