Abstract
Solid state amorphization is induced by shock, irradiation and deformation, while deformation induced complete amorphization remains a challenge in a bulk solid. Brittle-to-ductile transition (BDT) mechanism is elusive at loading speeds of m/s at nanoscale depth of cut. Existing formula has no effects of shape and radius of cutting edges on the critical depth of cut at BDT. In this study, a new route of deformation induced complete amorphization at nanoscale is proposed in a bulk solid confirmed by transmission electron microscopy (TEM). This is performed by a novel approach of ultraprecision grinding, conducted on a specially designed setup. The grinding is carried out by a developed single diamond grain with a cutting edge radius of 2.5 μm, at depth of cut of 24 nm under a loading speed of 40 m/s. BDT takes place at depth of cut of 419 and 172 nm for Si (100) respectively, ground by single diamond grains with tip radii of 5 and 2.5 μm correspondingly. A new model is suggested for BDT, considering the effects of radius and shape of cutting edges. The findings provide new insights for design and fabrication of high performance devices used in flexible electronics, nanodevices, microelectronics and optoelectronics.
Highlights
Amorphization is demonstrated in a NW with a diameter of 37.8 nm, which is bombarded by electron beam in vacuum for 25 min at 3.24 A/cm2.7 Axial extension induces amorphization in NWs carried out in high resolution transmission electron microscopy (HRTEM) at a strain rate of 10-5/s
Ductile removal mode is vital for solid state amorphization and applications of brittle materials in their high performance devices and setups
Fundamental mechanisms of brittle-to-ductile transition (BDT)10,13 are essential for the solid state amorphization and ductile removal on brittle materials
Summary
Cite as: AIP Advances 9, 025101 (2019); https://doi.org/10.1063/1.5079819 Submitted: 03 November 2018 • Accepted: 23 January 2019 • Published Online: 01 February 2019 Zhenyu Zhang, Fanning Meng, Junfeng Cui, et al. ARTICLES YOU MAY BE INTERESTED IN A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications Journal of Applied Physics 125, 082520 (2019); https://doi.org/10.1063/1.5052718 Analytical modelling for p-i-n structured semiconductor devices AIP Advances 9, 025102 (2019); https://doi.org/10.1063/1.5045090 Deformation-induced silicon nanostructures APL Materials 8, 090702 (2020); https://doi.org/10.1063/5.0025499
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