Abstract
First-principles calculations were employed to analyze the possible slip systems in Mo5SiB2. A striking result was obtained that the three most favorable slip systems, <100>(001), <110>(001) and [001]{010}, have close stacking fault energies, and the preference among them cannot be established. This finding explains a large variety of experimentally observed slip systems in Mo5SiB2. The dislocations associated with these slip systems may dissociate into partials joined with stacking faults and separated by the large splitting width of 5–6 nm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
