Deformation Behavior and Fracture Strength of Single‐Crystal 4H‐SiC Determined by Microcantilever Bending Tests

Abstract

In this study, the deformation behaviors and mechanical properties of 4H‐SiC single crystals are investigated using microcantilever beam specimens with two different sizes, A and B (A < B). Tensile stress is applied along <20> direction. Plastic deformation, or nonlinearity, is observed in the stress–strain curves, and yield stress, or proportional limit, coincides between the two specimens at ≈25 ± 2 GPa. Scanning transmission electron microscopy and transmission electron microscopy studies show that the plastic deformation is due to dislocation activities; multiple‐dislocation pileup areas are observed in both the specimens. Assuming {100}/<110> prismatic slip which most plausibly occurs in the <20> stress application, the critical resolved shar stress is estimated to be 10.9 GPa, which agrees well with the previous studies. Measured fracture strength is 41.9 ± 2.8 and 33.5 ± 2.4 GPa for the A and B, respectively. Dislocation–fracture relationship is discussed on the basis of dislocation‐based fracture mechanics, etc. It is suggested that cracks form within the multiple‐dislocation pileup area, by interaction with dislocation pileups, and act as fracture origins. A's strength is close to an ideal tensile strength of 4H‐SiC in the <110> direction, 47–55 GPa.