Abstract
A cylindrically shaped GaAs single crystal was used to study the orientation dependence of H 2 S adsorption for different sample temperatures (150, 300, 550 and 720 K) and preparation by ion bombardment and annealing (IBA) and molecular beam epitaxy (MBE). In this paper, Auger measurements are presented. For all orientations and temperatures, adsorption on IBA surfaces is enhanced compared to MBE surfaces. This indicates a strong defect influence and allows the titration of surface defects. Defect-titration works best around room temperature. At 150 K prefential adsorption effects are important with maximum adsorption on the (110) surface. At 550 and 720 K, orientation dependent and defect related penetration of sulfur is observed.
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