Defects involving interstitial boron in low-temperature irradiated silicon

Abstract

Interstitial boron-related defects in silicon subjected to irradiation with 5 MeV electrons at a temperature of 80 K are investigated by Fourier-transform infrared absorption spectroscopy. This study demonstrates the radiation-enhanced annealing of interstitial boron during irradiation. We have revealed the interaction, which occurs in the course of irradiation, of diffusing interstitial boron atoms with one another and with interstitial oxygen. The local vibrational modes associated with these defects are identified, and the thermal stability of the defects is determined.