Abstract

Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration.

Highlights

  • ZnO-based dilute magnetic semiconductors (DMSs) have attracted intense interests due to their potential applications in spintronic devices [1]

  • 0.9λ β cos θ where Dhkl is the particle size along direction, β is the full width at half maximum (FWHM) of the X-ray diffraction pattern (XRD) peak, λ = 0.154058 nm is the wavelength of Cu Kα radiation, and θ is the Bragg angle

  • The composition and chemical states of the ZnO thin films deposited under PO2 = 0 Pa and PO2 = 2 Pa are further investigated by X-ray photoelectron spectroscopy (XPS) analysis

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Summary

Introduction

ZnO-based dilute magnetic semiconductors (DMSs) have attracted intense interests due to their potential applications in spintronic devices [1]. Room temperature (RT) ferromagnetism (FM) has been reported theoretically and experimentally in magnetic transition metal doped ZnO nanoparticles and thin films [2,3,4,5,6,7]. The results of X-ray magnetic circular dichroism spectra showed that the magnetism in Mn doped ZnO nanoparticle and thin films is critically sensitive to defects other than the transition metal dopants themselves [8] and bulk ZnO doped with Co, Mn, or Cr shows paramagnetism [6, 9, 10]. Even absorbing certain organic molecules can induce ferromagnetic-like behavior in undoped ZnO nanoparticles [29]. These results challenge the understanding of the origin and mechanism of FM

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