Abstract
1.6 MeV He + ions were implanted at room temperature into (0 0 0 1) 4H–SiC at a dose of 1×10 17 cm −2 . Using cross-sectional transmission electron microscopy, we have investigated the damage induced by the implantation and by a 1500 °C annealing. In the as-implanted sample, the damage region consists of three layers, including a continuous amorphous layer surrounded with crystalline zones. After annealing, recrystallization of the amorphous state occurs and large bubbles or cavities are observed. A simple model based on atomic relocation has been proposed to explain the layered structure observed after implantation.
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