Abstract
Defects in a Ti(96 nm)/GaAs specimen were probed by monoenergetic positron beams. From measurements of Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons, vacancy-type defects were found to be present in both the Ti layer and the GaAs substrate. In the GaAs substrate, a damaged region was present below the Ti/GaAs interface, and its width was about 100 nm. The lifetime of the positrons (336 ps) trapped by the vacancy-type defects in this region was close to that of divacancies, , while the characteristic value of the lineshape parameter S for such defects was smaller than that for . From these results, the major species of the defects in the region below the Ti/GaAs interface was identified as being divacancy - impurity complexes.
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