Abstract
Formation and morphology of defects, including bubbles and voids, induced in silicon by He + implantation and subsequent high temperature and pressure treatment have been studied by means of X-ray diffraction method and grazing incidence small angle X-ray scattering (GISAXS). Enhanced pressure affects the formation of voids and/or of large cavities inducing creation of faceted structures. Moreover, high pressure treatment suppresses creation of interstitial-related defects.
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